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Proceedings Paper

Integrated silicon photodetector for lab-on-chip sensor platforms
Author(s): A. Samusenko; G. Pucker; D. Gandolfi; R. Guider; M. Ghulinyan; F. Ficorella; L. Pavesi
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Paper Abstract

In this paper we demonstrate design, fabrication and characterization of polycrystalline silicon (poly-Si) photodetectors monolithically integrated on top of a silicon oxynitride (SiON) passive photonic circuit. The devices are developed for operation at the wavelength of ~850nm. Interdigitated PIN structures were designed and compared with conventional lateral PIN detectors. The devices, fabricated in standard CMOS technology, exhibit low dark current values of few nanoamperes. The best responsivity of 0.33A/W under a reverse bias of 9V was achieved for lateral PIN detectors with 3-μm interelectrode gap, coupled vertically to the optical waveguide. The applicability of devices for lab-on-chip biosensing has been proved by demonstrating the possibility to reproduce the sensor's spectral response.

Paper Details

Date Published: 1 June 2015
PDF: 6 pages
Proc. SPIE 9520, Integrated Photonics: Materials, Devices, and Applications III, 95200D (1 June 2015); doi: 10.1117/12.2178973
Show Author Affiliations
A. Samusenko, Univ. of Trento (Italy)
Fondazione Bruno Kessler (Italy)
G. Pucker, Fondazione Bruno Kessler (Italy)
D. Gandolfi, Univ. degli Studi di Trento (Italy)
R. Guider, Univ. degli Studi di Trento (Italy)
M. Ghulinyan, Fondazione Bruno Kessler (Italy)
F. Ficorella, Fondazione Bruno Kessler (Italy)
L. Pavesi, Univ. degli Studi di Trento (Italy)


Published in SPIE Proceedings Vol. 9520:
Integrated Photonics: Materials, Devices, and Applications III
Jean-Marc Fédéli, Editor(s)

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