Share Email Print
cover

Proceedings Paper

Photoluminescence of graphene oxide integrated with silicon substrates
Author(s): M. Casalino; I. Rea; L. Sansone; M. Terracciano; L. De Stefano; G. Coppola; P. Dardano; M. Giordano; A. Borriello; Ivo Rendina
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

In this work we have investigated the photoluminescence signal emitted by graphene oxide (GO) nanosheets infiltrated in silanized porous silicon (PSi) matrix. We have demonstrated that a strong enhancement of the PL emitted from GO by a factor of almost 2.5 with respect to GO on crystalline silicon can be experimentally measured. This enhancement has been attributed to the high PSi specific area. In addition, we have observed a weak wavelength modulation of GO photoluminescence emission, this characteristic is very attractive and opens new perspectives for GO exploitation in innovative optoelectronic devices and high sensible fluorescent sensors.

Paper Details

Date Published: 1 May 2015
PDF: 7 pages
Proc. SPIE 9516, Integrated Optics: Physics and Simulations II, 95160V (1 May 2015); doi: 10.1117/12.2178771
Show Author Affiliations
M. Casalino, Istituto per la Microelettronica e Microsistemi, CNR (Italy)
I. Rea, Istituto per la Microelettronica e Microsistemi, CNR (Italy)
L. Sansone, IPCB, CNR (Italy)
M. Terracciano, Istituto per la Microelettronica e Microsistemi, CNR (Italy)
Univ. degli Studi di Napoli Federico II (Italy)
L. De Stefano, Istituto per la Microelettronica e Microsistemi, CNR (Italy)
G. Coppola, Istituto per la Microelettronica e Microsistemi, CNR (Italy)
P. Dardano, Istituto per la Microelettronica e Microsistemi, CNR (Italy)
M. Giordano, IPCB, CNR (Italy)
A. Borriello, IPCB, CNR (Italy)
Ivo Rendina, Istituto per la Microelettronica e Microsistemi, CNR (Italy)


Published in SPIE Proceedings Vol. 9516:
Integrated Optics: Physics and Simulations II
Pavel Cheben; Jiří Čtyroký; Iñigo Molina-Fernández, Editor(s)

© SPIE. Terms of Use
Back to Top