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Proceedings Paper

Research on mechanical vibration impacts of GaAs photocathode photoemission performance
Author(s): Feng Shi; Hong-chang Cheng; Xiao-feng Bai; Lei Yan
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Paper Abstract

The GaAs photocathode has widely been used in optoelectronic devices such as image intensifiers, photomultiplier tubes, but these devices is inevitable to withstand a variety of mechanical vibration. In order to study the mechanical vibration impact on the photoemission performance of GaAs photocathode, GaAs photocathode image intensifier is researched in this paper. The spectral response of the GaAs photocathode before and after 5~55Hz scan frequency, 14Hz, 33Hz, 52Hz stay frequency, 5~60Hz scan frequency mechanical vibration respectively was tested, then the parameter of photocathode was calculated by MATLAB software according to quantum efficiency formula, the quantum efficiency curve were fitted. The results show that surface escape probability is increased after photocathode is subjected to mechanical vibration, so that its photoemission performance will be improved. We think this phenomenon is due to the GaAs photocathode surface Cs-O reconstruction. This finding provided a new method to enhance the photoemission performance of photocathode.

Paper Details

Date Published: 13 April 2015
PDF: 5 pages
Proc. SPIE 9522, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part II, 95220G (13 April 2015); doi: 10.1117/12.2178699
Show Author Affiliations
Feng Shi, Science and Technology on Low-Light-Level Night Vision Lab. (China)
Hong-chang Cheng, Science and Technology on Low-Light-Level Night Vision Lab. (China)
Xiao-feng Bai, Science and Technology on Low-Light-Level Night Vision Lab. (China)
Lei Yan, Science and Technology on Low-Light-Level Night Vision Lab. (China)


Published in SPIE Proceedings Vol. 9522:
Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part II
Xiangwan Du; Jennifer Liu; Dianyuan Fan; Jialing Le; Yueguang Lv; Jianquan Yao; Weimin Bao; Lijun Wang, Editor(s)

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