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Proceedings Paper

Generation-recombination processes in InGaAs/GaAs heterostructures with one-dimensional nanostructures
Author(s): Marianna Kovalova; Serhiy Kondratenko; Artem Yakovlev; Colin Furrow; Vasyl Kunets; Morgan Ware; Gregory Salamo
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Paper Abstract

Structures with one-dimensional quantum objects in intermediate band are promising for their application in solar cells and photodetectors. We present analysis of dark current-voltage characteristics, photo-voltage decay and photo-voltage spectra for this structures in comparison with reference GaAs based structures. It has been shown that InGaAs quantum wires make a significant influence on J-V dependences and photo-voltage spectra. InGaAs QWRS are additional recombination centers and transitions between them dominated over by Shockley-Read-Hall recombination at low bias. The InGaAs/GaAs sample shows a significantly higher photo-voltage in the spectral range of 1.25-1.37 eV, as compared to a reference GaAs p-n junction, due to intermediate band transitions in the quantum wires.

Paper Details

Date Published: 1 June 2015
PDF: 10 pages
Proc. SPIE 9519, Nanotechnology VII, 95190W (1 June 2015); doi: 10.1117/12.2178684
Show Author Affiliations
Marianna Kovalova, Taras Shevchenko National Univ. of Kyiv (Ukraine)
Serhiy Kondratenko, Taras Shevchenko National Univ. of Kyiv (Ukraine)
Artem Yakovlev, Taras Shevchenko National Univ. of Kyiv (Ukraine)
Colin Furrow, Univ. of Arkansas (United States)
Vasyl Kunets, Univ. of Arkansas (United States)
Morgan Ware, Univ. of Arkansas (United States)
Gregory Salamo, Univ. of Arkansas (United States)


Published in SPIE Proceedings Vol. 9519:
Nanotechnology VII
Ion M. Tiginyanu, Editor(s)

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