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Proceedings Paper

Waveguide and active region structure optimization for low-divergence InAs/InGaAs quantum dot comb lasers
Author(s): Vladimir V. Korenev; Artem V. Savelyev; Alexey E. Zhukov; Mikhail V. Maximov; Alexander V. Omelchenko
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Paper Abstract

Ways to improve beam divergence and energy consumption of quantum dot lasers emitting via the ground-state optical transitions by optimization of the key parameters of laser active region are discussed. It is shown that there exist an optimal cavity length, dispersion of inhomogeneous broadening and number of QD layers in active region allowing to obtain lasing spectrum of a given width at minimum injection current. The planar dielectric waveguide of the laser is optimized by analytical means for a better trade-off between high Γ-factor and low beam divergence.

Paper Details

Date Published: 18 May 2015
PDF: 7 pages
Proc. SPIE 9503, Nonlinear Optics and Applications IX, 950305 (18 May 2015); doi: 10.1117/12.2178681
Show Author Affiliations
Vladimir V. Korenev, St. Petersburg Academic Univ. (Russian Federation)
St. Petersburg Polytechnical Univ. (Russian Federation)
Artem V. Savelyev, St. Petersburg Academic Univ. (Russian Federation)
St. Petersburg Polytechnic Univ. (Russian Federation)
Alexey E. Zhukov, St. Petersburg Academic Univ. (Russian Federation)
Ioffe Physical-Technical Institute (Russian Federation)
St. Petersburg Polytechnic Univ. (Russian Federation)
Mikhail V. Maximov, Ioffe Physical-Technical Institute (Russian Federation)
St. Petersburg Academic Univ. (Russian Federation)
St. Petersburg Polytechnic Univ. (Russian Federation)
Alexander V. Omelchenko, St. Petersburg Academic Univ. (Russian Federation)
St. Petersburg Polytechnic Univ. (Russian Federation)


Published in SPIE Proceedings Vol. 9503:
Nonlinear Optics and Applications IX
Mario Bertolotti; Joseph W. Haus; Alexei M. Zheltikov, Editor(s)

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