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Proceedings Paper

AlGaInN laser diode technology and systems for defence and security applications
Author(s): Stephen P. Najda; Piotr Perlin; Tadek Suski; Lucja Marona; Mike Boćkowski; Mike Leszczyński; Przemek Wisniewski; Robert Czernecki; Robert Kucharski; Grzegorz Targowski; Scott Watson; Antony E. Kelly
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Paper Abstract

The latest developments in AlGaInN laser diode technology are reviewed for defence and security applications such as underwater communications. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well. Thus AlGaInN laser diode technology is a key enabler for the development of new disruptive system level applications in displays, telecom, defence and other industries.

Paper Details

Date Published: 20 May 2015
PDF: 12 pages
Proc. SPIE 9466, Laser Technology for Defense and Security XI, 946604 (20 May 2015); doi: 10.1117/12.2178463
Show Author Affiliations
Stephen P. Najda, TopGaN Ltd. (Poland)
Piotr Perlin, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
Tadek Suski, Institute of High Pressure Physics (Poland)
Lucja Marona, Institute of High Pressure Physics (Poland)
Mike Boćkowski, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
Mike Leszczyński, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
Przemek Wisniewski, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
Robert Czernecki, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
Robert Kucharski, Ammono S.A. (Poland)
Grzegorz Targowski, TopGaN Ltd. (Poland)
Scott Watson, Univ. of Glasgow (United Kingdom)
Antony E. Kelly, Univ. of Glasgow (United Kingdom)


Published in SPIE Proceedings Vol. 9466:
Laser Technology for Defense and Security XI
Mark Dubinskii; Stephen G. Post, Editor(s)

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