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Proceedings Paper

Effect of annealing time on the adsorption of cesium atoms
Author(s): Sen Niu; Feng Shi; Hongchang Cheng; Long Wang; Lei Yan; Hongli Shi; Yuan Yuan; Chang Chen
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Paper Abstract

The gallium arsenide (GaAs) photocathode generally requires a high temperature thermal cleaning before (Cs, O) activation in order to obtain an atomic level clean surface. The process is useful to adsorb and deposit cesium and oxygen atoms. Generally considered, the photocathode needs to be cooled to 60℃ to activate for achieving better results. People usually keep the annealing time for at least 1.5 hours in practical production. In order to explore the effect of annealing time on cesium atoms which were adsorbed on GaAs photocathode, the experiment monitored the activation curves of three GaAs photocathodes samples which annealed for 0.5 hour, 1.0 hour, 1.5 hours respectively, and then compared the occurrence moment of the photocurrent and the first cesium peak by different annealing waiting time. The difference of the activation curves reflects indirectly that the photocathode surface temperature had an influence on the adsorption of cesium atoms during activation process. This phenomenon could explain from two aspects about atoms adsorption and electronic transport. The work has referential significance for experimental research and industrial production.

Paper Details

Date Published: 4 March 2015
PDF: 5 pages
Proc. SPIE 9521, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part I, 95211N (4 March 2015); doi: 10.1117/12.2178361
Show Author Affiliations
Sen Niu, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night Vision Technology Group Co., Ltd. (China)
Feng Shi, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night Vision Technology Group Co., Ltd. (China)
Hongchang Cheng, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night Vision Technology Group Co., Ltd. (China)
Long Wang, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night Vision Technology Group Co., Ltd. (China)
Lei Yan, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night Vision Technology Group Co., Ltd. (China)
Hongli Shi, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night Vision Technology Group Co., Ltd. (China)
Yuan Yuan, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night Vision Technology Group Co., Ltd. (China)
Chang Chen, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night Vision Technology Group Co., Ltd. (China)


Published in SPIE Proceedings Vol. 9521:
Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part I
Xun Hou; Zhihong Wang; Lingan Wu; Jing Ma, Editor(s)

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