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Proceedings Paper

A study of doping influences on transmission of large-diameter gallium antimonide substrates for long-wave (LWIR) to very long wavelength (VLWIR) infra-red applications
Author(s): Rebecca Martinez; Marius Tybjerg; Brian Smith; Andrew Mowbray; Mark J. Furlong
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Paper Abstract

Gallium antimonide (GaSb) is an important Group III-V compound semiconductor for infra-red (IR) photodetectors used in sensing and imaging applications. Operating in the mid (3-5 μm) to long wavelength region (8-12 μm) of the IR spectrum, the application of GaSb detectors is extensive, encompassing military, industrial, medical and environmental uses. A significant developing technology for GaSb based detectors are those effective in the very long wavelength (VLWIR) infra-red region (13 μm and beyond) which are advantageous in space and stealth based applications which necessitate high operating temperatures. In this study different doping levels of GaSb are considered and the IR transmission spectra examined by Fourier Transform IR analysis. GaSb n-type doped material consistent in delivering long to very long wavelength transmission is demonstrated which is preferable to p-type material which requires backside thinning for IR transmission. Czochralski (Cz) grown GaSb wafers are assessed for electrical quality and uniformity results, on Hall mobility, resistivity and carrier level reported. Results of this work will establish the carrier concentration that ultimately results in high transparency substrates. In summary enhancements in IR transmission will be shown to be achieved in GaSb bulk crystals by tellurium (Te) compensation.

Paper Details

Date Published: 4 June 2015
PDF: 11 pages
Proc. SPIE 9451, Infrared Technology and Applications XLI, 94510U (4 June 2015); doi: 10.1117/12.2178089
Show Author Affiliations
Rebecca Martinez, IQE IR (United Kingdom)
Marius Tybjerg, Wafer Technology Ltd. (United Kingdom)
Brian Smith, Wafer Technology Ltd. (United Kingdom)
Andrew Mowbray, Wafer Technology Ltd. (United Kingdom)
Mark J. Furlong, IQE IR (United Kingdom)


Published in SPIE Proceedings Vol. 9451:
Infrared Technology and Applications XLI
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; Paul R. Norton, Editor(s)

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