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Proceedings Paper

Two-dimensional materials for low power and high frequency devices
Author(s): Brian M. Bersch; Yu-Chuan Lin; Kehao Zhang; Sarah M. Eichfeld; Jacob H. Leach; Robert Metzger; Keith Evans; Joshua A. Robinson
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Paper Abstract

In this paper, we present an overview of the current state-of-the-art in two-dimensional materials beyond graphene, and summarize device performance reported to-date. There is promise for these layered materials to be the foundation of a new area in low power and high frequency electronics, with early reports indicating 10s of gigahertz (GHz) operation without significant optimization of parasitic resistances or capacitances. In addition, we discuss the synthesis of transition metal dichalcogenides and the integration of as-grown material into heterostructures and electronic devices. Finally, we discuss the impact of surface preparation on the integration of dielectrics with MoS2 required to achieve GHz performance.

Paper Details

Date Published: 22 May 2015
PDF: 9 pages
Proc. SPIE 9467, Micro- and Nanotechnology Sensors, Systems, and Applications VII, 94670T (22 May 2015); doi: 10.1117/12.2177986
Show Author Affiliations
Brian M. Bersch, The Pennsylvania State Univ. (United States)
Yu-Chuan Lin, The Pennsylvania State Univ. (United States)
Kehao Zhang, The Pennsylvania State Univ. (United States)
Sarah M. Eichfeld, The Pennsylvania State Univ. (United States)
Jacob H. Leach, Kyma Technologies, Inc. (United States)
Robert Metzger, Kyma Technologies, Inc. (United States)
Keith Evans, Kyma Technologies, Inc. (United States)
Joshua A. Robinson, The Pennsylvania State Univ. (United States)


Published in SPIE Proceedings Vol. 9467:
Micro- and Nanotechnology Sensors, Systems, and Applications VII
Thomas George; Achyut K. Dutta; M. Saif Islam, Editor(s)

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