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Proceedings Paper

Wavelength-tunable erbium-doped fiber laser using silicon-on-insulator (SOI) based micro-ring with narrow laser linewidth
Author(s): L. G. Yang; C. W. Chow; C. H. Yeh; H. K. Tsang
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Paper Abstract

We propose and demonstrate a wavelength-tunable and narrow-linewidth erbium-doped fiber (EDF) laser using siliconon- insulator (SOI) based micro-ring. We discuss the wavelength selection and wavelength-tunable operation of the proposed fiber laser. The SOI based micro-ring is fabricated on a SOI wafer with a 0.22 um thick top silicon layer and a 2 um thick burial oxide (BOX) layer. In order to enhance the coupling efficiency between the SOI based micro-ring and the EDF, a pair of uniform period grating couplers are used. In the experiment, the lasing wavelengths can be tuned in the wavelengths range from 1532 nm to 1567.2 nm with a tuning step of 2 nm. The wavelength range and the tuning step are determined by the EDFA gain-bandwidth and the FSR of the SOI based micro-ring respectively. The OSNR of each lasing wavelength is > 42 dB. By using a double-ring configuration, a narrow laser linewidth of 50 kHz can be achieved.

Paper Details

Date Published: 12 May 2015
PDF: 6 pages
Proc. SPIE 9513, High-Power, High-Energy, and High-Intensity Laser Technology II, 95130Z (12 May 2015); doi: 10.1117/12.2177972
Show Author Affiliations
L. G. Yang, National Chiao Tung Univ. (Taiwan)
C. W. Chow, National Chiao Tung Univ. (Taiwan)
C. H. Yeh, Feng Chia Univ. (Taiwan)
H. K. Tsang, The Chinese Univ. of Hong Kong (Hong Kong, China)


Published in SPIE Proceedings Vol. 9513:
High-Power, High-Energy, and High-Intensity Laser Technology II
Joachim Hein, Editor(s)

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