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Proceedings Paper

Flexible phosphorene devices and circuits
Author(s): Weinan Zhu; Maruthi N. Yogeesh; Deji Akinwande
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Paper Abstract

Two-dimensional (2D) semiconductors with high carrier mobilities and sizeable bandgap are desirable for future high-speed and low power mechanically flexible nanoelectronics. In this work, we report encapsulated bottom-gated black phosphorus (BP) field-effect transistors (FETs) on flexible polyimide affording maximum carrier mobility of about 310cm2/V∙s and current on/off ratio exceeding 103. Essential circuits of flexible electronic systems enabled by the device ambipolar functionality, high-mobility and current saturation are demonstrated in this work, including digital inverter, frequency doubler, and analog amplifiers featuring a voltage gain of ~8.7, which is the state-of-the-art value for flexible 2D semiconductor based amplifiers. In addition, we demonstrate the single FET based flexible BP amplitude-modulated (AM) demodulator, an active stage in radio receivers.

Paper Details

Date Published: 22 May 2015
PDF: 6 pages
Proc. SPIE 9467, Micro- and Nanotechnology Sensors, Systems, and Applications VII, 94670A (22 May 2015); doi: 10.1117/12.2177563
Show Author Affiliations
Weinan Zhu, The Univ. of Texas at Austin (United States)
Maruthi N. Yogeesh, The Univ. of Texas at Austin (United States)
Deji Akinwande, The Univ. of Texas at Austin (United States)


Published in SPIE Proceedings Vol. 9467:
Micro- and Nanotechnology Sensors, Systems, and Applications VII
Thomas George; Achyut K. Dutta; M. Saif Islam, Editor(s)

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