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Proceedings Paper

A low noise low power 512×256 ROIC for extended wavelength InGaAs FPA
Author(s): Songlei Huang; Zhangcheng Huang; Yu Chen; Tao Li; Jiaxiong Fang
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Paper Abstract

A low noise low power 512×256 readout integrated circuit (ROIC) based on Capacitance Trans-impedance Amplifier (CTIA) was designed in this paper. The ROIC with 30μm pixel-pitch and 70 fF integrated capacitance as normal structure and test structure capacitance from 5 to 60 fF, was fabricated in 0.5μm DPTM CMOS process. The results showed that output voltage was larger than 2.0V and power consumption was about 150mW, output ROIC noise was about 3.6E-4V which equivalent noise was 160e-, and the test structure noise was from 20e- to 140 e-. Compared the readout noises in Integration Then Readout (ITR) mode and Integration While Readout (IWR) mode, it indicated that in IWR mode, readout noise comes mainly from both integration capacitance and sampling capacitance, while in ITR mode, readout noise comes mostly from sampling capacitance. Finally the ROIC was flip-chip bonded with Indium bumps to extended wavelength InGaAs detectors with cutoff wavelength 2.5μm at 200K. The peak detectivity exceeded 5E11cmHz1/2/w with 70nA/cm2 dark current density at 200K.

Paper Details

Date Published: 13 May 2015
PDF: 6 pages
Proc. SPIE 9481, Image Sensing Technologies: Materials, Devices, Systems, and Applications II, 94810M (13 May 2015); doi: 10.1117/12.2176534
Show Author Affiliations
Songlei Huang, Shanghai Institute of Technical Physics (China)
Zhangcheng Huang, Shanghai Institute of Technical Physics (China)
Yu Chen, Shanghai Institute of Technical Physics (China)
Tao Li, Shanghai Institute of Technical Physics (China)
Jiaxiong Fang, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 9481:
Image Sensing Technologies: Materials, Devices, Systems, and Applications II
Nibir K. Dhar; Achyut K. Dutta, Editor(s)

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