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Proceedings Paper

Local topography of optoelectronic substrates prepared by dry plasma etching process
Author(s): Dinara Dallaeva; Shikhgasan Ramazanov; Elena Prokopyeva; Pavel Tománek; Lubomír Grmela
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Paper Abstract

In this work, the etch rate of silicon carbide and aluminum oxide were studied as a function of the angle etching material and flow of plasma. Al2O3 and SiC are important materials in the design of optical and electronic devices and the topography of the wafers has a large influence on the device quality. Argon was applied for the dry etching of Al2O3 and SiC wafers. The wafer slope for highest obtained etch is defined. Atomic force microscopy was used to good morphology control of etched wafers. Statistical and correlation analysis was applied to estimate the surface perfection. Interferometry allowed to control etching rate.

Paper Details

Date Published: 7 January 2015
PDF: 6 pages
Proc. SPIE 9442, Optics and Measurement Conference 2014, 944208 (7 January 2015); doi: 10.1117/12.2176367
Show Author Affiliations
Dinara Dallaeva, Brno Univ. of Technology (Czech Republic)
Shikhgasan Ramazanov, Dagestan State Univ. (Russian Federation)
Elena Prokopyeva, Brno Univ. of Technology (Czech Republic)
Pavel Tománek, Brno Univ. of Technology (Czech Republic)
Lubomír Grmela, Brno Univ. of Technology (Czech Republic)


Published in SPIE Proceedings Vol. 9442:
Optics and Measurement Conference 2014
Jana Kovačičinová; Tomáš Vít, Editor(s)

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