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Proceedings Paper

Potential application of tip-enhanced Raman spectroscopy (TERS) in semiconductor manufacturing
Author(s): P. Y. Hung; Thomas E. O'Loughlin; Aaron Lewis; Rimma Dechter; Martin Samayoa; Sarbajit Banerjee; Erin L. Wood; Angela R. Hight Walker
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Paper Abstract

Tip-enhanced Raman spectroscopy (TERS), with nanometer spatial resolution, has the capability to monitor chemical composition, strain, and activated dopants and is a promising metrology tool to aid the semiconductor R&D processes. This paper addresses the major challenges which limit the application of TERS from routine measurement: the lack of comparability, reproducibility, calibration, and standardization. To address these issues, we have developed a robust test structure and the ability to generate high-quality tips using a high volume manufacturing (HVM) approach. The qualifying data will be presented.

Paper Details

Date Published: 19 March 2015
PDF: 13 pages
Proc. SPIE 9424, Metrology, Inspection, and Process Control for Microlithography XXIX, 94241S (19 March 2015); doi: 10.1117/12.2175623
Show Author Affiliations
P. Y. Hung, SEMATECH Inc. (United States)
Thomas E. O'Loughlin, Texas A&M Univ. (United States)
Aaron Lewis, Nanonics Imaging Ltd. (Israel)
Rimma Dechter, Nanonics Imaging Ltd. (Israel)
Martin Samayoa, SEMATECH Inc. (United States)
Sarbajit Banerjee, Texas A&M Univ. (United States)
Erin L. Wood, National Institute of Standards and Technology (United States)
Angela R. Hight Walker, National Institute of Standards and Technology (United States)


Published in SPIE Proceedings Vol. 9424:
Metrology, Inspection, and Process Control for Microlithography XXIX
Jason P. Cain; Martha I. Sanchez, Editor(s)

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