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Proceedings Paper

Simulating massively parallel electron beam inspection for sub-20 nm defects
Author(s): Benjamin D. Bunday; Maseeh Mukhtar; Kathy Quoi; Brad Thiel; Matt Malloy
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Paper Abstract

SEMATECH has initiated a program to develop massively-parallel electron beam defect inspection (MPEBI). Here we use JMONSEL simulations to generate expected imaging responses of chosen test cases of patterns and defects with ability to vary parameters for beam energy, spot size, pixel size, and/or defect material and form factor. The patterns are representative of the design rules for an aggressively-scaled FinFET-type design. With these simulated images and resulting shot noise, a signal-to-noise framework is developed, which relates to defect detection probabilities. Additionally, with this infrastructure the effect of detection chain noise and frequency dependent system response can be made, allowing for targeting of best recipe parameters for MPEBI validation experiments, ultimately leading to insights into how such parameters will impact MPEBI tool design, including necessary doses for defect detection and estimations of scanning speeds for achieving high throughput for HVM.

Paper Details

Date Published: 19 March 2015
PDF: 15 pages
Proc. SPIE 9424, Metrology, Inspection, and Process Control for Microlithography XXIX, 94240J (19 March 2015); doi: 10.1117/12.2175573
Show Author Affiliations
Benjamin D. Bunday, SEMATECH Inc. (United States)
Maseeh Mukhtar, SUNY Polytechnic Institute (United States)
Kathy Quoi, SUNY Polytechnic Institute (United States)
Brad Thiel, SUNY Polytechnic Institute (United States)
Matt Malloy, SEMATECH Inc. (United States)


Published in SPIE Proceedings Vol. 9424:
Metrology, Inspection, and Process Control for Microlithography XXIX
Jason P. Cain; Martha I. Sanchez, Editor(s)

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