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Proceedings Paper

Low leakage current high breakdown voltage InSb p+n diodes
Author(s): Tai Ping Sun; Si-Chen Lee; Kou-Chen Liu; Sheng-Jehn Yang
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Paper Abstract

The effect of photochemical deposition of Si02 on the current•voltage characteristics of the InSb pn diodes was studied. By applying different voltages on the gate electrode over the p+n junction periphery, various kinds of current-voltage characteristics can be induced, including multiple negative differential resistance in forward bias, This strongly indicates that the major part of the current, especially the reverse leakage current, flows through the surface of the p+n junction. Reverse leakage current as low as 20 zA/cm2 at -1.1 V for a diode with n-type doping concentration of 2 x 1015 cm3 could be easily achieved by applying a gate voltage of -9 V. It is also found that diodes with similar performance can be fabricated by properly adjusting the photochemical vapor deposition passivation process.

Paper Details

Date Published: 1 September 1990
PDF: 11 pages
Proc. SPIE 1308, Infrared Detectors and Focal Plane Arrays, (1 September 1990); doi: 10.1117/12.21749
Show Author Affiliations
Tai Ping Sun, National Taiwan Univ. (Taiwan)
Si-Chen Lee, National Taiwan Univ. (Taiwan)
Kou-Chen Liu, Chung Shan Institute of Science and Technology (Taiwan)
Sheng-Jehn Yang, Chung Shan Institute of Science and Technology (Taiwan)


Published in SPIE Proceedings Vol. 1308:
Infrared Detectors and Focal Plane Arrays
Eustace L. Dereniak; Robert E. Sampson, Editor(s)

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