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Proceedings Paper

New meander channel 2-D CCD imager on GaAs
Author(s): Peter B. Kosel; Nercy Bozorgebrahimi
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Paper Abstract

The design, fabrication, and operation of a two-phase meander-channel CCD imager on GaAs are described. The fabrication process is based on the use of anodic oxidation for producing thin dielectric isolations between close-packed Schottky-barrier metal electrodes and the employment of recessed gates for producing self-aligned potential barriers between the adjacent charge wells of the meander channel. Additionally, the semiinsulating property of GaAs is utilized in order to produce the high-speed photoconductive sensors. It is shown that such imagers can have unit cell sizes and pixel densities comparable to their silicon counterparts but offer the speed of performance higher by about one order of magnitude.

Paper Details

Date Published: 1 September 1990
PDF: 9 pages
Proc. SPIE 1308, Infrared Detectors and Focal Plane Arrays, (1 September 1990); doi: 10.1117/12.21736
Show Author Affiliations
Peter B. Kosel, Univ. of Cincinnati (United States)
Nercy Bozorgebrahimi, Univ. of Cincinnati (United States)

Published in SPIE Proceedings Vol. 1308:
Infrared Detectors and Focal Plane Arrays
Eustace L. Dereniak; Robert E. Sampson, Editor(s)

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