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Proceedings Paper

Properties of conducting In-S-O films prepared from a volatile complex compound
Author(s): V. G. Bessergenev; Elena Nikolaevna Ivanova; Yu. A. Kovalevskaya; V. N. Kirichenko; Stanislav Vasiljevic Larionov; V. O. Handros; S. A. Gromilov
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Paper Abstract

Described in the work is a two-stage process of the fabrication of indium oxide films, consisting in a preliminary synthesis of indium sulphide and its subsequent oxidation. Films of In2S3 were prepared by the method of gas-phase deposition from the volatile complex compound indium(III) isopropylxanthate. The crystal structure and electrical characteristics of the In2S3 films were studied when the temperature of the synthesis was varied in the 230 - 450 degree(s)C range. According to the x-ray phase analysis of the indium sulphide films, they were polycrystalline with cubic ((alpha) -phase) or tetragonal ((beta) -phase) structure. They were oriented with the (alpha) [111] direction perpendicular to the glass substrate for the whole interval of the synthesis temperatures. The In2S3 films turned into cubic In2O3 after annealing in the presence of oxygen. It was shown by auger analysis that annealed samples were indium oxide films with a small admixture of sulphur. The electrical resistance was measured in situ, during the oxidation process. The specific electrical resistance of indium sulphide films varied from 0.1 to 500 Ohm.cm depending on the temperature of the synthesis. The electrical characteristics of the In2O3:S films were connected with the properties of the starting In2S3 films. The lowest values of specific resistivity ((rho) approximately equals 1.10-2 Ohm.cm) for In2O3:S films were attained by the oxidation of In2S3 films synthesized at T >= 370 degree(s)C .

Paper Details

Date Published: 23 August 1995
PDF: 8 pages
Proc. SPIE 2531, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XIV, (23 August 1995); doi: 10.1117/12.217352
Show Author Affiliations
V. G. Bessergenev, Institute of Inorganic Chemistry (Russia)
Elena Nikolaevna Ivanova, Institute of Inorganic Chemistry (Russia)
Yu. A. Kovalevskaya, Institute of Inorganic Chemistry (Russia)
V. N. Kirichenko, Institute of Inorganic Chemistry (Russia)
Stanislav Vasiljevic Larionov, Institute of Inorganic Chemistry (Russia)
V. O. Handros, Institute of Inorganic Chemistry (Russia)
S. A. Gromilov, Institute of Inorganic Chemistry (Russia)


Published in SPIE Proceedings Vol. 2531:
Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XIV
Carl M. Lampert; Satyen K. Deb; Claes-Goeran Granqvist, Editor(s)

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