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Proceedings Paper

Vacuum-evaporated indium tin oxide layers
Author(s): S. Venkatasubramanian; K. R. Murali; N. Rangarajan; V. Subramanian; T. Elango
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Paper Abstract

Indium tin oxide (ITO) film has been prepared by sequential vacuum deposition of indium and tin on plain glass followed by oxidation at temperatures around 400 degrees - 650 degrees Celsius. By a proper control of the time of evaporation and the heating current the concentration of vacuum evaporated indium was maintained constant and tin concentration was varied in the range of 10 - 60% by weight. ITO films with good optical and electrical properties can be obtained by adjusting the ratio of Sn:In in the range of 1:9 to 1:35 after heat- treatment at 400 degrees to 600 degrees Celsius. The films exhibit a sheet resistance of 20 ohms per square with an optical transmission of 60% at 500 nm when the Sn:In ratio was maintained at 1:9. The film was found suitable for ITO/Si solar cells and as substrates for photo anodes in PEC cells.

Paper Details

Date Published: 23 August 1995
PDF: 5 pages
Proc. SPIE 2531, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XIV, (23 August 1995); doi: 10.1117/12.217351
Show Author Affiliations
S. Venkatasubramanian, Sharana Basaveshwar Public School and Composite Pre-University College (India)
K. R. Murali, Central Electrochemical Research Institute (India)
N. Rangarajan, Central Electrochemical Research Institute (India)
V. Subramanian, Central Electrochemical Research Institute (India)
T. Elango, Annamalai Polytechnic (India)

Published in SPIE Proceedings Vol. 2531:
Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XIV
Carl M. Lampert; Satyen K. Deb; Claes-Goeran Granqvist, Editor(s)

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