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Proceedings Paper

Evolution of the Si-SiO2 interface characteristics due to preoxidation texturing of silicon surface
Author(s): Anatoliy P. Gorban; Pyotr I. Didenko; Vitaliy P. Kostylyov; Vladimir G. Litovchenko; Igor B. Nikolin; Galina Ph. Romanova; Alexandr A. Serba; Vladimir V. Chernenko
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Paper Abstract

Electrical, photoelectrical, and impurity-structural properties of the Si-SiO2 structures formed under the same technological conditions at flat type (FS) and textured (TS) surface regions of silicon wafers were investigated. Enhanced in comparison with FS surface generation velocity, Sg, increased built-in oxide charge density, NsO, and comparatively high differential concentration of interface states, Nss, were obtained with TS. Typical for Pb-centers maximums in Nss(E) spectra at energy position E equals Ec-0.25 eV were observed both for FS and TS samples indicating the participation of silicon atoms with dandling bonds in formation of the Si-SiO2 interface states. Accordingly to SIMS data, the oxide layer at TS was highly contaminated by alkali metals (Na, K) the microstructure of the Si-SiO2 interface being more disordered and 'friable' than in the FS case.

Paper Details

Date Published: 23 August 1995
PDF: 6 pages
Proc. SPIE 2531, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XIV, (23 August 1995); doi: 10.1117/12.217347
Show Author Affiliations
Anatoliy P. Gorban, Institute of Semiconductor Physics (Ukraine)
Pyotr I. Didenko, Institute of Semiconductor Physics (Ukraine)
Vitaliy P. Kostylyov, Institute of Semiconductor Physics (Ukraine)
Vladimir G. Litovchenko, Institute of Semiconductor Physics (Ukraine)
Igor B. Nikolin, Institute of Semiconductor Physics (Ukraine)
Galina Ph. Romanova, Institute of Semiconductor Physics (Ukraine)
Alexandr A. Serba, Institute of Semiconductor Physics (Ukraine)
Vladimir V. Chernenko, Institute of Semiconductor Physics (Ukraine)

Published in SPIE Proceedings Vol. 2531:
Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XIV
Carl M. Lampert; Satyen K. Deb; Claes-Goeran Granqvist, Editor(s)

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