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Proceedings Paper

Spatially variable reaction in the formation of anodically grown porous silicon structure
Author(s): Maria Cristina dos Santos; Douglas S. Galvao; O. Teschke; D. M. Soares
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Paper Abstract

The formation mechanism of anodically grown porous silicon is experimentally shown to be controlled by two electrochemical reactions: the silicon dissolution reaction occurring at fluorine-covered sites on the surface and the oxidation of molecular hydrogen that takes place at hydrogen-covered sites. The latter reaction injects electrons in the silicon surface and produces an increase in dissolution rate at fluorine-covered sits. The dissolution rate increase in the presence of excess charge at the fluorine-covered sites is investigated theoretically by semi-empirical Hartree-Fock calculations that show that this spatially variable dissolution generates the porous silicon structure.

Paper Details

Date Published: 23 August 1995
PDF: 8 pages
Proc. SPIE 2531, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XIV, (23 August 1995); doi: 10.1117/12.217346
Show Author Affiliations
Maria Cristina dos Santos, Univ. Estadual de Campinas (Brazil)
Douglas S. Galvao, Univ. Estadual de Campinas (Brazil)
O. Teschke, Univ. Estadual de Campinas (Brazil)
D. M. Soares, Univ. Estadual de Campinas (Brazil)

Published in SPIE Proceedings Vol. 2531:
Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XIV
Carl M. Lampert; Satyen K. Deb; Claes-Goeran Granqvist, Editor(s)

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