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Proceedings Paper

Monolithic IR sensor arrays in heteroepitaxial narrow-gap lead chalcogenides on Si for the SWIR, MWIR, and LWIR range
Author(s): Hans Zogg; Clau Maissen; Jiri Masek; Stefan Blunier; Taizo J. Hoshino
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Paper Abstract

The heteroepitaxy of narrow gap semiconductor (NGS) layers on Si substrates is described, and the fabrication of photovoltaic IR-sensor arrays in the NGS layers is explained. Lead chalcogenides are grown and employed to facilitate the fabrication of NGS material. Stacked intermediate CaF2-BaF2 bilayers are employed to overcome the lattice and thermal expansion mismatches, thereby attaining epitaxy in the NGS layers. Linear sensor arrays were built on Si substrates with cutoff wavelengths ranging from 3 to more than 12 microns. Performance testing shows that the sensitivity of the most effective PbTe on Si sensors equals that of Hg(1-x)Cd(x)Te, with possible improvement. The compositional homogeneity of NGS material is shown to be less critical with lead salts. The efficacious shielding of charges resulting from defects, a consequence of the high permittivity of lead salts, is shown to allow the development of more fault-tolerant IR sensors. The slower response time indicated in photovoltaic IR focal plane arrays for thermal imaging applications is shown to be insignificant.

Paper Details

Date Published: 1 September 1990
PDF: 9 pages
Proc. SPIE 1308, Infrared Detectors and Focal Plane Arrays, (1 September 1990); doi: 10.1117/12.21734
Show Author Affiliations
Hans Zogg, Swiss Federal Institute of Technology (Switzerland)
Clau Maissen, Swiss Federal Institute of Technology (Switzerland)
Jiri Masek, Swiss Federal Institute of Technology (Switzerland)
Stefan Blunier, Swiss Federal Institute of Technology (Switzerland)
Taizo J. Hoshino, Swiss Federal Institute of Technology (Switzerland)


Published in SPIE Proceedings Vol. 1308:
Infrared Detectors and Focal Plane Arrays
Eustace L. Dereniak; Robert E. Sampson, Editor(s)

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