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Proceedings Paper

New p-type absorber films formed by interfacial diffusion in chemically deposited metal chalcogenide multilayer films
Author(s): Padmanabhan Karunakara Nair; Santhamma M.T. Nair; Hailin Hu; Ling Huang; R. A. Zingaro; E. A. Meyers
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Paper Abstract

We report on new p-type ternary metal chalcogenide absorber films for possible solar energy applications. The films are formed by interfacial diffusion in chemically deposited multilayer films: CuS films (0.15 - 0.6 micrometer) deposited on ZnS, PbS or Bi2S3 films (approximately equal to 0.1 micrometer). The diffusion takes place during annealing at temperatures above 150 degree(s)C and is shown in the XPS depth profile spectra of the annealed samples: metal atoms (Zn, Pb or Bi) of the underlying substrate films are detected at the surface layers after the annealing. The peculiarity of the multilayer films is that they show almost constant sheet resistance upon further annealing until 350 degree(s)C. The sheet resistances are in the range of 20 - 100 (Omega) suggesting conductivities (p-type) of up to 400 (Omega) -1cm-1. In the case of CuS on Bi2S3 films, the formation of a compound, Cu3BiS3, is clearly detected.

Paper Details

Date Published: 23 August 1995
PDF: 12 pages
Proc. SPIE 2531, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XIV, (23 August 1995); doi: 10.1117/12.217335
Show Author Affiliations
Padmanabhan Karunakara Nair, Univ. Nacional Autonoma de Mexico (Mexico)
Santhamma M.T. Nair, Univ. Nacional Autonoma de Mexico (Mexico)
Hailin Hu, Univ. Nacional Autonoma de Mexico (Mexico)
Ling Huang, Texas Agricultural and Mechanical Univ. (United States)
R. A. Zingaro, Texas Agricultural and Mechanical Univ. (United States)
E. A. Meyers, Texas Agricultural and Mechanical Univ. (United States)


Published in SPIE Proceedings Vol. 2531:
Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XIV
Carl M. Lampert; Satyen K. Deb; Claes-Goeran Granqvist, Editor(s)

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