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Proceedings Paper

Review of Schottky-barrier imager technology
Author(s): Walter F. Kosonocky
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Paper Abstract

Advances in the development of infrared image sensors with Schottky-barrier detectors (SBDs) are reviewed. SBD operation and design structure are described, including the responsivity and dark-current characteristics and SBD fabrication. The reported results for a variety of focal plane arrays (FPAs) are compared in terms of parameters such as pixel size, fill factor, and SBD type. The development of scanning PtSi FPAs with 4096 by 4 elements and 2048 by 16 TDI elements is reported for spaceborne remote sensing applications. Up to 512 by 512 elements and 640 by 486 elements have reportedly been developed for high-resolution staring PtSi FPAs. Useful thermal imaging is shown for some staring FPAs, and IrSi SBDs with cut-off wavelengths up to 10 microns is shown for some FPAs in the LWIR band. Because the silicon VLSI process is exclusively employed to produce Schottky-barrier FPAs, these FPAs are found to be useful for uniform, low-cost SWIR and MWIR applications.

Paper Details

Date Published: 1 September 1990
PDF: 25 pages
Proc. SPIE 1308, Infrared Detectors and Focal Plane Arrays, (1 September 1990); doi: 10.1117/12.21713
Show Author Affiliations
Walter F. Kosonocky, New Jersey Institute of Technology (United States)


Published in SPIE Proceedings Vol. 1308:
Infrared Detectors and Focal Plane Arrays
Eustace L. Dereniak; Robert E. Sampson, Editor(s)

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