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Proceedings Paper

Low-leakage-current high-breakdown-voltage InSb p+n diodes
Author(s): Tai Ping Sun; Si-Chen Lee; Kou-Chen Liu; Sheng-Jehn Yang
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Paper Abstract

The effect of photochemical deposition of Si02 on the currentvoltage characteristics of the InSb pn diodes was studied. By applying different voltages on the gate electrode over the pn junction periphery, various kinds of current-voltage characteristics can be induced, including multiple negative differential resistance in forward bias. This strongly indicates that the major part of the current, especially the reverse leakage current, flows through the surface of the p+n junction. Reverse leakage current as low as 20 A/cm2 at -1.1 V for a p+n diode with n-type doping concentration of 2 x i0 cm3 could be easily achieved by applying a gate voltage of -9 V. It is also found that diodes with similar performance can be fabricated by properly adjusting the photochemical vapor deposition passivation process.

Paper Details

Date Published: 1 October 1990
PDF: 12 pages
Proc. SPIE 1307, Electro-Optical Materials for Switches, Coatings, Sensor Optics, and Detectors, (1 October 1990); doi: 10.1117/12.21708
Show Author Affiliations
Tai Ping Sun, National Taiwan Univ. (Taiwan)
Si-Chen Lee, National Taiwan Univ. (Taiwan)
Kou-Chen Liu, Chung Shan Institute of Science and Technology (United States)
Sheng-Jehn Yang, Chung Shan Institute of Science and Technology (Taiwan)


Published in SPIE Proceedings Vol. 1307:
Electro-Optical Materials for Switches, Coatings, Sensor Optics, and Detectors
Rudolf Hartmann; M. J. Soileau; Vijay K. Varadan, Editor(s)

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