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Proceedings Paper

Growth of detector quality MCT in a vertical MOCVD reactor
Author(s): Suha Oguz; Ronald J. Olson; Donald L. Lee; Lindley T. Specht; Vilnis G. Kreismanis
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Paper Abstract

HgCdTe epitaxial layers were grown on (111)B CdTe substrates in a commercially purchased and modified vertical MOCVD reactor. DIPTe, DMCd and elemental Hg were used as reactants and growth takes place at 360°C. Run-to-run reproducibility of composition and electrical properties was studied over a hundred growth runs. Hall measurements show that n-type material is consistently obtained with carrier concentrations in the mid 10'4/cm3 and mobilities as high as good bulk material. LWIR photoconductive devices were fabricated with this low carrier concentration material and tested. The responsivity and the lifetime measurements indicated that these devices perform as well as those fabricated with purchased LPE material. Excellent device performance was obtained on 80-element photodiode arrays fabricated with x''0.3 p-type HgCdTe samples by formin9 flf/p junctions by ion implantation. R0A values obtained are ..1x1Ob Q-cm2 at 77K for Xco 5.7 1m and are highly uniform within an 80-element array. We also report on an all MOCVD grown p-on-n double-layer heterojunction (DLHJ) photodiode with Xco 8.1 um.

Paper Details

Date Published: 1 October 1990
PDF: 8 pages
Proc. SPIE 1307, Electro-Optical Materials for Switches, Coatings, Sensor Optics, and Detectors, (1 October 1990); doi: 10.1117/12.21705
Show Author Affiliations
Suha Oguz, Raytheon Research Div. (United States)
Ronald J. Olson, Raytheon Research Div. (United States)
Donald L. Lee, Raytheon Research Div. (United States)
Lindley T. Specht, Raytheon Research Div. (United States)
Vilnis G. Kreismanis, Raytheon Research Div. (United States)

Published in SPIE Proceedings Vol. 1307:
Electro-Optical Materials for Switches, Coatings, Sensor Optics, and Detectors
Rudolf Hartmann; M. J. Soileau; Vijay K. Varadan, Editor(s)

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