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Proceedings Paper

Annealing characteristics of Hg1-xCdxTe grown by organometallic vapor phase epitaxy
Author(s): Krishna K. Parat; Nikhil R. Taskar; Ishwara B. Bhat; Sorab K. Ghandhi
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Paper Abstract

The annealing behavior of Hg1CdTe layers, grown by the conventional Organometallic Vapor Phase Epitaxy (OMVPE) , is reported. As grown layers, which are p-type with a concentration around 4 x 10'6/cm3 of mercury vacancies, become light p-type with carrier concentrations around 1-2x 10'5/cm3 after Hg saturated annealings at temperatures in the range of 200-230°C. These conditions, usually sufficient for the complete annealing of bulk Hg1_CdTe, to n-type, are thus inadequate for OMVPE grown epilayers. The as grown layers are converted to n-type with a carrier concentration of approximately 5 x 10'4/cm3 by a higher temperature anneal at 290°C, followed by a low temperature anneal at 220°C. Hall effect measurements were made under variable temperature as well as variable magnetic field conditions. Bulk carrier concentrations and mobilities were evaluated by considering the effect of the surface inversion/accumulation layer on the Hall data. It is proposed that ptype conduction in the partially annealed layers is due to the persistence of vacancies in the Hg1_CdTe layer, which are not completely annihilated during the low temperature anneal. Conversion to n-type is probably due to residual donor impurities in the as grown Hg1_CdTe layer.

Paper Details

Date Published: 1 October 1990
PDF: 9 pages
Proc. SPIE 1307, Electro-Optical Materials for Switches, Coatings, Sensor Optics, and Detectors, (1 October 1990); doi: 10.1117/12.21704
Show Author Affiliations
Krishna K. Parat, Rensselaer Polytechnic Institute (United States)
Nikhil R. Taskar, Rensselaer Polytechnic Institute (United States)
Ishwara B. Bhat, Rensselaer Polytechnic Institute (United States)
Sorab K. Ghandhi, Rensselaer Polytechnic Institute (United States)

Published in SPIE Proceedings Vol. 1307:
Electro-Optical Materials for Switches, Coatings, Sensor Optics, and Detectors
Rudolf Hartmann; M. J. Soileau; Vijay K. Varadan, Editor(s)

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