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Proceedings Paper

Measurement of the birefringence in cadmium telluride electro-optic modulators
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Paper Abstract

Cadmium telluride is the primary choice for electro-optic modulator applications in the mid infrared region - particularly at 10.6 micron. In principle, single crystal CdTe in the rest state is only weakly birefringent along the {1 1O} planes. Some internal birefringence does exist, however, due to fabricated-in stress birefringence and birefringence associated with slippage of the crystal along the {1 1 1} planes. When a voltage is applied to a CdTe crystal, the total phase shift introduced by the crystal is a result of the combination of the electro-optic effect and the residual birefringence. This paper will present a method of measuring the phase shift produced by residual birefringence in CdTe modulators at 10.6 micron. The test method is a modification of the crossed polarizer technique. Test results will be presented for CdTe modulators with voltage and without voltage.

Paper Details

Date Published: 1 October 1990
PDF: 7 pages
Proc. SPIE 1307, Electro-Optical Materials for Switches, Coatings, Sensor Optics, and Detectors, (1 October 1990); doi: 10.1117/12.21699
Show Author Affiliations
Gary L. Herrit, II-VI Inc. (United States)
Herman E. Reedy, II-VI Inc. (United States)

Published in SPIE Proceedings Vol. 1307:
Electro-Optical Materials for Switches, Coatings, Sensor Optics, and Detectors
Rudolf Hartmann; M. J. Soileau; Vijay K. Varadan, Editor(s)

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