Share Email Print

Proceedings Paper

Measurement of the birefringence in cadmium telluride electro-optic modulators
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Cadmium telluride is the primary choice for electro-optic modulator applications in the mid infrared region - particularly at 10.6 micron. In principle, single crystal CdTe in the rest state is only weakly birefringent along the {1 1O} planes. Some internal birefringence does exist, however, due to fabricated-in stress birefringence and birefringence associated with slippage of the crystal along the {1 1 1} planes. When a voltage is applied to a CdTe crystal, the total phase shift introduced by the crystal is a result of the combination of the electro-optic effect and the residual birefringence. This paper will present a method of measuring the phase shift produced by residual birefringence in CdTe modulators at 10.6 micron. The test method is a modification of the crossed polarizer technique. Test results will be presented for CdTe modulators with voltage and without voltage.

Paper Details

Date Published: 1 October 1990
PDF: 7 pages
Proc. SPIE 1307, Electro-Optical Materials for Switches, Coatings, Sensor Optics, and Detectors, (1 October 1990); doi: 10.1117/12.21699
Show Author Affiliations
Gary L. Herrit, II-VI Inc. (United States)
Herman E. Reedy, II-VI Inc. (United States)

Published in SPIE Proceedings Vol. 1307:
Electro-Optical Materials for Switches, Coatings, Sensor Optics, and Detectors
Rudolf Hartmann; M. J. Soileau; Vijay K. Varadan, Editor(s)

© SPIE. Terms of Use
Back to Top