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Proceedings Paper

Emissivity modulation of semiconductor infrared source
Author(s): Ralph M. Mindock
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Paper Abstract

Data on advances in the technology of a new patented infrared source are presented. Infrared output from 3 to 12 microns is produced by the modulation of the emissivity of silicon. Information on the long term stability and on various applications for the source is provided.

Paper Details

Date Published: 1 October 1990
PDF: 7 pages
Proc. SPIE 1307, Electro-Optical Materials for Switches, Coatings, Sensor Optics, and Detectors, (1 October 1990); doi: 10.1117/12.21690
Show Author Affiliations
Ralph M. Mindock, High Technology Sensors, Inc. (United States)


Published in SPIE Proceedings Vol. 1307:
Electro-Optical Materials for Switches, Coatings, Sensor Optics, and Detectors
Rudolf Hartmann; M. J. Soileau; Vijay K. Varadan, Editor(s)

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