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Proceedings Paper

Nonlinearities in semiconductors for optical limiting
Author(s): Ali A. Said; Mansoor Sheik-Bahae; David J. Hagan; Edesly J. Canto-Said; Yuan-Yen Wu; James Young; Tai-Huei Wei; Eric W. Van Stryland
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Paper Abstract

We present measurements of nonlinear absorption and refraction in semiconductors used in the realization of optical limiters. We show that nonlinear refraction at 532 nm in ZnSe is caused by a negative third order electronic Kerr effect in addition to the two-photon-absorption (2PA) induced carrier refraction. We have used time-resolved beam distortion, picosecond time-resolved degenerate four-wave mixing and our recently developed Z-scan technique to determine the sign and magnitude of the 2PA coefficient, the bound electronic nonlinearity, n2 and the refractive index change per free carrier.

Paper Details

Date Published: 1 October 1990
PDF: 8 pages
Proc. SPIE 1307, Electro-Optical Materials for Switches, Coatings, Sensor Optics, and Detectors, (1 October 1990); doi: 10.1117/12.21679
Show Author Affiliations
Ali A. Said, CREOL/Univ. of Central Florida (United States)
Mansoor Sheik-Bahae, CREOL/Univ. of Central Florida (United States)
David J. Hagan, CREOL/Univ. of Central Florida (United States)
Edesly J. Canto-Said, CREOL/Univ. of Central Florida (Canada)
Yuan-Yen Wu, CREOL/Univ. of Central Florida (United States)
James Young, CREOL/Univ. of Central Florida (United States)
Tai-Huei Wei, CREOL/Univ. of Central Florida (Taiwan)
Eric W. Van Stryland, CREOL/Univ. of Central Florida (United States)


Published in SPIE Proceedings Vol. 1307:
Electro-Optical Materials for Switches, Coatings, Sensor Optics, and Detectors
Rudolf Hartmann; M. J. Soileau; Vijay K. Varadan, Editor(s)

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