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Proceedings Paper

Single- and multiple-beam nonlinear absorption and refraction measurements in semiconductors
Author(s): Arthur L. Smirl; Thomas F. Boggess; Jimmy Dubard; A. G. Cui
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Paper Abstract

We describe picosecond single- and multiple-beam measurements of the nonlinear absorption and refraction in a variety of semiconductors. Single-beam and pump-probe transmission measurements are used to isolate instantaneous nonlinearities from cumulative processes. These techniques, together with a simple rate equation model, have allowed us to extract information regarding mid-gap levels and to measure both the two-photon absorption coefficients and the free carrier absorption cross sections in these samples. Our model, together with Z-scan and beam deflection measurements of the nonlinear refraction, has provided the change in index due to each photogenerated electron-hole pair.

Paper Details

Date Published: 1 October 1990
PDF: 11 pages
Proc. SPIE 1307, Electro-Optical Materials for Switches, Coatings, Sensor Optics, and Detectors, (1 October 1990); doi: 10.1117/12.21675
Show Author Affiliations
Arthur L. Smirl, Univ. of Iowa (United States)
Thomas F. Boggess, Univ. of Iowa (United States)
Jimmy Dubard, Univ. of Iowa (United States)
A. G. Cui, Univ. of Iowa (United States)

Published in SPIE Proceedings Vol. 1307:
Electro-Optical Materials for Switches, Coatings, Sensor Optics, and Detectors
Rudolf Hartmann; M. J. Soileau; Vijay K. Varadan, Editor(s)

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