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Proceedings Paper

Comparison between single-beam and multiple-beam optical limiters in semiconductors
Author(s): Jimmy Dubard; Arthur L. Smirl; Thomas F. Boggess; A. G. Cui; Steven R. Skinner
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Paper Abstract

We report our investigations of multiple-beam optical limiter configurations using GaAs and Si as the nonlinear optical material. Three distinct multiple-beam geometries are discussed. One of these, in which two beams interfere within the semiconductor, takes advantage of transient energy transfer and photorefractive beam coupling to deplete the signal beam. The other two configurations exploit the absorptive and refractive index changes induced in the semiconductor by a strong control beam that arrives at the sample before the signal. For one of these configurations, nonlinear absorption and induced defocusing are used to attenuate the signal in the other, nonlinear absorption and induced deflection are used. We discuss the relative merits of each configuration and compare them to single beam results obtained under identical experimental conditions.

Paper Details

Date Published: 1 October 1990
PDF: 9 pages
Proc. SPIE 1307, Electro-Optical Materials for Switches, Coatings, Sensor Optics, and Detectors, (1 October 1990); doi: 10.1117/12.21674
Show Author Affiliations
Jimmy Dubard, Univ. of Iowa (United States)
Arthur L. Smirl, Univ. of Iowa (United States)
Thomas F. Boggess, Univ. of Iowa (United States)
A. G. Cui, Univ. of Iowa (United States)
Steven R. Skinner, Univ. of Iowa (United States)

Published in SPIE Proceedings Vol. 1307:
Electro-Optical Materials for Switches, Coatings, Sensor Optics, and Detectors
Rudolf Hartmann; M. J. Soileau; Vijay K. Varadan, Editor(s)

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