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Proceedings Paper

Ferroelectric coatings by the sol-gel method
Author(s): Ching Jih Chen; Yuhuan Xu; John D. Mackenzie
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Paper Abstract

Recent research on ferroelectric films via the sol-gel method is discussed, with emphases on preparative problems, electrical and optical properties, and applications in devices. Ferroelectric thin films, including LiNbO3, BaTiO3, KNbO3, Pb(ZrTii)O3, and (SrBai..)Nb2O6, were investigated. The structures of these ferroelectric materials are primary made up of networks of oxygen octahedras. They crystallized at relatively low temperature (< 0.5 Tm ), where Tm is liquidus temperature. Typical applications of ferroelectrics considered here include holographic memory and non-volatile semiconductor memory devices.

Paper Details

Date Published: 1 October 1990
PDF: 11 pages
Proc. SPIE 1307, Electro-Optical Materials for Switches, Coatings, Sensor Optics, and Detectors, (1 October 1990); doi: 10.1117/12.21662
Show Author Affiliations
Ching Jih Chen, Univ. of California/Los Angeles (United States)
Yuhuan Xu, Univ. of California/Los Angeles (United States)
John D. Mackenzie, Univ. of California/Los Angeles (United States)


Published in SPIE Proceedings Vol. 1307:
Electro-Optical Materials for Switches, Coatings, Sensor Optics, and Detectors
Rudolf Hartmann; M. J. Soileau; Vijay K. Varadan, Editor(s)

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