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Proceedings Paper

Characterization of aluminum nitride thin films grown by plasma source molecular-beam epitaxy
Author(s): Gregory W. Auner; Pao-Kuang Kuo; Y. S. Lu; Zhouling Wu
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Paper Abstract

Aluminum nitride (AlN) thin films are grown by a newly developed plasma source molecular beam epitaxy (PSMBE) system. The films were grown on Al2O3 (1102), Al2O3 (0001), Si (111), and Si (100) substrates. Structural characterization of the films were performed by x-ray diffraction (XRD), atomic force microscopy (AFM), and high resolution electron microscopy (HREM). The XRD pattern indicates highly textured films. Cross-sectional HREM reveals epitaxy on AlN on most substrates. The Si (111) and Al2O3 (0001) plane is lattice matched to the c-plane growth of AlN and the Al2O3 (1102) plane is lattice matched to the a-plane growth of AlN. The optical and thermal properties of these films and studied by ellipsometry and thermal wave analysis. The quality of the films is evidenced by the low optical absorption, bulk-like optical index, and bulk-like thermal conductivity.

Paper Details

Date Published: 14 July 1995
PDF: 8 pages
Proc. SPIE 2428, Laser-Induced Damage in Optical Materials: 1994, (14 July 1995); doi: 10.1117/12.213750
Show Author Affiliations
Gregory W. Auner, Wayne State Univ. (United States)
Pao-Kuang Kuo, Wayne State Univ. (United States)
Y. S. Lu, Wayne State Univ. (United States)
Zhouling Wu, Eastern Michigan Univ. (United States)


Published in SPIE Proceedings Vol. 2428:
Laser-Induced Damage in Optical Materials: 1994
Harold E. Bennett; Arthur H. Guenther; Mark R. Kozlowski; Brian Emerson Newnam; M. J. Soileau, Editor(s)

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