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Proceedings Paper

Electron-beam-induced current study of gallium nitride and diamond materials
Author(s): A. D. Cropper; Daniel J. Moore; Craig J. Scott; Ronald Green
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Paper Abstract

The continual need for microelectronic devices that operate under severe electronic and environmental conditions (high temperature, high frequency, high power, and radiation tolerance) has sustained research in wide bandgap semiconductor materials. The properties suggest these wide bandgap semiconductor materials have tremendous potential for military and commercial applications. High frequency bipolar transistors and field effect transistors, diodes, and short wavelength optical devices have been proposed using these materials. Although research efforts involving the study of transport properties in GaN and diamond have made significant advances, much work is still needed to improve the material quality so that the electrophysical behavior of device structures can be further understood and exploited. Electron beam induced current (EBIC) measurements can provide a method of understanding the transport properties in GaN and diamond. This technique basically consists of measuring the current or voltage transient response to the drift and diffusion of carriers created by a short-duration pulse of radiation. This method differs from other experiemental techniques because it is based on a fast transient electron beam created from a high- speed, laser-pulsed photoemission system.

Paper Details

Date Published: 14 July 1995
PDF: 9 pages
Proc. SPIE 2428, Laser-Induced Damage in Optical Materials: 1994, (14 July 1995); doi: 10.1117/12.213748
Show Author Affiliations
A. D. Cropper, Virginia Polytechnic Institute and State Univ. (United States)
Daniel J. Moore, Virginia Polytechnic Institute and State Univ. (United States)
Craig J. Scott, Morgan State Univ. (United States)
Ronald Green, Morgan State Univ. (United States)


Published in SPIE Proceedings Vol. 2428:
Laser-Induced Damage in Optical Materials: 1994
Harold E. Bennett; Arthur H. Guenther; Mark R. Kozlowski; Brian Emerson Newnam; M. J. Soileau, Editor(s)

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