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Proceedings Paper

Degradation of optical components in laser machines for manufacturing
Author(s): Michael J. Dahmen; C. R. Haas; Ernst-Wolfgang Kreutz; David A. Wesner
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Paper Abstract

Coated ZnSe optical components are irradiated with high-power, pulsed CO2 laser radiation at fluences up to 250 J/cm2. The components are characterized at various stages of irradiation by optical microscopy, interferometric microscopy, profilometry, surface chemical analysis (x-ray photoemission and Auger electron spectroscopy), and surface structural analysis (micron-Raman spectroscopy). Two types of coating damage occur within the irradiated area of the component: a breaking apart of the ZnSe overlayer of the coating system over relatively large areas resulting in a network structure, and the formation of isolated craters of diameter approximately 30-50 micrometers extending in depth of approximately 5 micrometers through the coating system down to the ZnSe substrate. Chemically, the irradiated area is characterized by an oxidation of both Zn and Se and an increase in the stoichiometric ratio of Zn and Se. These effects are especially pronounced at the crater defects, and are attributed to localized optical absorption, leading to thermal stress and chemical reactions of Zn and Se with atmospheric or absorbed water and/or oxygen. Structually, the coatings exhibit a polycrystalline structure with no orientation of the individual grains. During irradiation the grain size diminishes giving, in addition, indication for built-in stress and partial melting at high laser fluences.

Paper Details

Date Published: 14 July 1995
PDF: 7 pages
Proc. SPIE 2428, Laser-Induced Damage in Optical Materials: 1994, (14 July 1995); doi: 10.1117/12.213700
Show Author Affiliations
Michael J. Dahmen, RWTH Aachen (Germany)
C. R. Haas, RWTH Aachen (Germany)
Ernst-Wolfgang Kreutz, RWTH Aachen (Germany)
David A. Wesner, RWTH Aachen (Germany)


Published in SPIE Proceedings Vol. 2428:
Laser-Induced Damage in Optical Materials: 1994
Harold E. Bennett; Arthur H. Guenther; Mark R. Kozlowski; Brian Emerson Newnam; M. J. Soileau, Editor(s)

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