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Proceedings Paper

Measurement of temperature dependencies of real and imaginary parts of the complex index of refraction of monocrystalline of silicon in the range of absorption edge
Author(s): Alexander N. Magunov
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Paper Abstract

Optical constants of monocrystalline silicon are experimentally determined in the range from 293 K to 700 K using laser lines of 1.06 micrometers and 1.15 micrometers . The quantitative description of spectral and temperature dependencies of the absorption coefficient for indirect optical transitions is given as well as the empirical approximation of spectral and temperature dependencies of refractive index.

Paper Details

Date Published: 23 June 1995
PDF: 6 pages
Proc. SPIE 2208, Refractometry, (23 June 1995); doi: 10.1117/12.213175
Show Author Affiliations
Alexander N. Magunov, Institute of Microelectronics (Russia)


Published in SPIE Proceedings Vol. 2208:
Refractometry
Maksymilian Pluta; Mariusz Szyjer, Editor(s)

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