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Proceedings Paper

Long-term stability of ion-sensitive field effect transistors: Si3N4, Al2O3, and Ta2O5 membranes drift
Author(s): Dorota Pijanowska; Wladislaw Torbicz; M. Konwicki
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Paper Abstract

Long-term stability of ion sensitive field effect transistors with inorganic membranes, dependent on the time drift phenomena is analyzed. The results presented in the paper relate to the Si3N4, Al2O3 and Ta2O5 membranes pH-ISFETs drift with the respect to the following parameters: sensitivity, linearity, linear time drift coefficient of threshold voltage and hysteresis.

Paper Details

Date Published: 30 June 1995
PDF: 5 pages
Proc. SPIE 2634, Optoelectronic and Electronic Sensors, (30 June 1995); doi: 10.1117/12.213163
Show Author Affiliations
Dorota Pijanowska, Institute of Biocybernetics and Biomedical Engineering (Poland)
Wladislaw Torbicz, Institute of Biocybernetics and Biomedical Engineering (Poland)
M. Konwicki, Institute of Electron Technology (Poland)

Published in SPIE Proceedings Vol. 2634:
Optoelectronic and Electronic Sensors
Ryszard Jachowicz; Zdzislaw Jankiewicz, Editor(s)

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