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Proceedings Paper

New phase-shifting mask technology for quarter-micron photolithography
Author(s): Yoshihiko Okamoto; Kazuhiro Gyouda
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Paper Abstract

A new phase shifting mask technology that will remarkable improve the resolution of photolithography is proposed. This new phase shifting mask has a two layer structure, which consists of a ordinary transmission pattern substrate and a phase shifting pattern substrate. These two substrates are fabricated independently. Then, two substrates are overlapped with each other. The imaging plane of the projection lens using this phase shifting mask is shifted by a small amount to the projection lens. However, this mask is very little spherical aberration. In addition, particles on the back surface of the transmission pattern substrate and the phase shifting pattern substrate are prevented from being transferred. Then, a quarter micron resist pattern can be obtained even by an i-line stepper with a resolution capability of 0.45 micrometers . This new phase shifting mask is an extremely attractive tool for quarter micron photolithography.

Paper Details

Date Published: 3 July 1995
PDF: 8 pages
Proc. SPIE 2512, Photomask and X-Ray Mask Technology II, (3 July 1995); doi: 10.1117/12.212803
Show Author Affiliations
Yoshihiko Okamoto, Hitachi, Ltd. (Japan)
Kazuhiro Gyouda, Hitachi, Ltd. (Japan)

Published in SPIE Proceedings Vol. 2512:
Photomask and X-Ray Mask Technology II
Hideo Yoshihara, Editor(s)

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