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Proceedings Paper

Advanced mask fabrication system
Author(s): Tadahiro Takigawa; Toru Tojo; Yoji Ogawa; Kiyomi Koyama; Akira Ono; Soichi Inoue; Shinichi Ito; Mineo Goto
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Paper Abstract

Masks and their fabrication technologies are keys to the further advancement of optical lithography. A stable SiNx single layer attenuated masks for DUV have been developed. A 0.2 micrometers contact hole pattern was fabricated using a KrF stepper with the SiNx attenuated mask. Toshiba mask fabrication system, including an electron beam writing system, a data base inspection system, and a data conversion system, has been developed for 64 Mbit DRAM class. Required mask improvements for increasing optical lithography resolution include better critical dimension (CD) uniformity, higher mask writing system resolution, and automatic shifter patten generation of alternating phase shifting masks. In addition, improved mask pattern positioning accuracy is also required. In this paper, experimental CD uniformity and resolution improvements, automatic phase shifter assignment method, and improvement in positioning accuracy, are described. The future development of masks will incorporate these key technologies.

Paper Details

Date Published: 3 July 1995
PDF: 10 pages
Proc. SPIE 2512, Photomask and X-Ray Mask Technology II, (3 July 1995); doi: 10.1117/12.212798
Show Author Affiliations
Tadahiro Takigawa, Toshiba Corp. (Japan)
Toru Tojo, Toshiba Corp. (Japan)
Yoji Ogawa, Toshiba Corp. (Japan)
Kiyomi Koyama, Toshiba Corp. (Japan)
Akira Ono, Toshiba Corp. (Japan)
Soichi Inoue, Toshiba Corp. (Japan)
Shinichi Ito, Toshiba Corp. (Japan)
Mineo Goto, Toshiba Corp. (Japan)


Published in SPIE Proceedings Vol. 2512:
Photomask and X-Ray Mask Technology II
Hideo Yoshihara, Editor(s)

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