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Proceedings Paper

Die-to-database defect detection for reticles of 64- and 256-Mbit DRAMs
Author(s): Yair Eran; Gad Greenberg; Gideon Rossman
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Paper Abstract

The development and production of 64 and 256 Mbit DRAMs presents new challenges to mask defect detection. As happened during the development of previous generations of DRAMs, the decrease in line/space design rule dictates a similar decrease in the specification of mask defect size. This trend introduces new technologies and new requirements. This paper is concerned with two evolving technologies: layout modification for optical proximity correction (OPC) and phase-shift masks (PSM). The new technologies pose many issues for the mask maker. In this paper the defect detection is addressed. In section 2 few cases of OPC reticle inspection are presented while in section 3 the defect detection of PSM is discussed.

Paper Details

Date Published: 3 July 1995
PDF: 4 pages
Proc. SPIE 2512, Photomask and X-Ray Mask Technology II, (3 July 1995); doi: 10.1117/12.212795
Show Author Affiliations
Yair Eran, Orbot Instruments Ltd. (Israel)
Gad Greenberg, Orbot Instruments Ltd. (Israel)
Gideon Rossman, Orbot Instruments (Israel)


Published in SPIE Proceedings Vol. 2512:
Photomask and X-Ray Mask Technology II
Hideo Yoshihara, Editor(s)

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