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Proceedings Paper

Investigation and improvement of patterning characteristics for annular illumination optical lithography at the periodical pattern ends
Author(s): Toshiyuki Horiuchi; Katsuhiro Harada; Yoshinobu Takeuchi; Yoshiaki Mimura; Emi Tamechika
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Paper Abstract

This article describes particular patterning characteristics of annular illumination lithography and a method to improve them. Annular illumination lithography is one of the most practical methods to enhance resolution and enlarge focus latitude. However, improving the patterning characteristics is not sufficient at the ends of periodical patterns in spite of superior performance at the periodical parts. Here, the degradation of the patten profiles at the periodical ends are investigated in detail, and size-modification of the end patterns is proposed. By making the reticle pattern widths a little wider only at the ends, end-pattern degradation is greatly improved, and practical depth-of-focus is favorably extended.

Paper Details

Date Published: 3 July 1995
PDF: 9 pages
Proc. SPIE 2512, Photomask and X-Ray Mask Technology II, (3 July 1995); doi: 10.1117/12.212793
Show Author Affiliations
Toshiyuki Horiuchi, NTT LSI Labs. (Japan)
Katsuhiro Harada, NTT LSI Labs. (Japan)
Yoshinobu Takeuchi, NTT LSI Labs. (Japan)
Yoshiaki Mimura, NTT LSI Labs. (Japan)
Emi Tamechika, NTT LSI Labs. (Japan)

Published in SPIE Proceedings Vol. 2512:
Photomask and X-Ray Mask Technology II
Hideo Yoshihara, Editor(s)

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