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Proceedings Paper

Sub 0.1 μm ArF excimer laser lithography with alternating phase-shifting masks
Author(s): Jun Ushioda; Yuko Seki; Hiroyoshi Tanabe; Yukio Ogura; Katsumi Maeda; Takeshi Ohfuji
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Paper Abstract

We delineated 0.088 micrometers line and space patterns by using an etched-in phase-shifting mask. The etched area of the mask had good morphology and high transmittance for deep UV light. The phase-shifting angle of the etched area was well controlled within 180 +/- 5 degrees.

Paper Details

Date Published: 3 July 1995
PDF: 5 pages
Proc. SPIE 2512, Photomask and X-Ray Mask Technology II, (3 July 1995); doi: 10.1117/12.212787
Show Author Affiliations
Jun Ushioda, NEC Corp. (Japan)
Yuko Seki, NEC Corp. (Japan)
Hiroyoshi Tanabe, NEC Corp. (Japan)
Yukio Ogura, NEC Corp. (Japan)
Katsumi Maeda, NEC Corp. (Japan)
Takeshi Ohfuji, NEC Corp. (Japan)


Published in SPIE Proceedings Vol. 2512:
Photomask and X-Ray Mask Technology II
Hideo Yoshihara, Editor(s)

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