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Proceedings Paper

Application of phase-shift mask to GaAs IC fabrication process
Author(s): Yoshiki Kojima; Mitsunori Nakatani; Hirofumi Nakano; Kazuya Kamon; Kazuhiko Sato
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Paper Abstract

To obtain stable light contrast, a pattern accuracy, alignment accuracy and irradiation resistance of SOG have been investigated, and pattern layout has been optimized for the subresolution PSM and edge-line PSM. Satisfactory pattern accuracy and no deterioration in transmissivity index during exposure of 500,000 J/cm2 have been confirmed on fabricated PSMs. Applying these PSMs to GaAs IC process, a fine gate finger pattern of 0.3 micrometers has successfully been formed without generation of undesirable pattern in the joint area of gate finer and large area pad.

Paper Details

Date Published: 3 July 1995
PDF: 9 pages
Proc. SPIE 2512, Photomask and X-Ray Mask Technology II, (3 July 1995); doi: 10.1117/12.212786
Show Author Affiliations
Yoshiki Kojima, Mitsubishi Electric Corp. (Japan)
Mitsunori Nakatani, Mitsubishi Electric Corp. (Japan)
Hirofumi Nakano, Mitsubishi Electric Corp. (Japan)
Kazuya Kamon, Mitsubishi Electric Corp. (Japan)
Kazuhiko Sato, Mitsubishi Electric Corp. (Japan)


Published in SPIE Proceedings Vol. 2512:
Photomask and X-Ray Mask Technology II
Hideo Yoshihara, Editor(s)

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