Share Email Print
cover

Proceedings Paper

248-nm DUV MoSiON embedded phase-shifting mask for 0.25 micrometer lithography
Author(s): Giang T. Dao; Gang Liu; Robert F. Hainsey; Jeff N. Farnsworth; Yasuo Tokoro; Susumu Kawada; Tsuneo Yamamoto; Nobuyuki Yoshioka; Akira Chiba; Hiroaki Morimoto
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Over the past five years worldwide efforts have been made to develop new techniques for optical lithography enhancement. These techniques include optical proximity correction, off-axis illumination, pupil filtering and phase-shifting mask (PSM). Among many phase-shifting mask approaches, embedded PSM (EPSM) method has drawn significant interest due to its relatively simple reticle fabrication process and excellent lithographic performance, in particular, for dark field mask layers such as contact and via holes. Perhaps, the most difficult task in materializing the EPSM technology is the creation of a thin film structure that controls both phase and transmission. In addition, this film structure must withstand severe environment of mask making process and yet can be inspected and repaired successfully using currently available tool sets. The newly developed MoSiON material meets these requirements and has demonstrated a feasibility for DUV EPSM pilot production. In this paper, characteristics of the DUV lifetime test results. Details of reticle fabrication process including e-beam writing, dry etching, inspection and repair will be presented along with chemical durability data and process capability. Finally, wafer level lithographic performance for contact holes printed on a step-and-scan and a projection aligner will be shown to demonstrate lithographic performance of 248 nm DUV EPSM for 0.25 micrometer lithography.

Paper Details

Date Published: 3 July 1995
PDF: 14 pages
Proc. SPIE 2512, Photomask and X-Ray Mask Technology II, (3 July 1995); doi: 10.1117/12.212781
Show Author Affiliations
Giang T. Dao, Intel Corp. (United States)
Gang Liu, Intel Corp. (United States)
Robert F. Hainsey, Intel Corp. (United States)
Jeff N. Farnsworth, Intel Corp. (United States)
Yasuo Tokoro, Ulvac Coating Corp. (Japan)
Susumu Kawada, Ulvac Coating Corp. (Japan)
Tsuneo Yamamoto, Ulvac Coating Corp. (Japan)
Nobuyuki Yoshioka, Mitsubishi Electric Corp. (Japan)
Akira Chiba, Mitsubishi Electric Corp. (Japan)
Hiroaki Morimoto, Mitsubishi Electric Corp. (Japan)


Published in SPIE Proceedings Vol. 2512:
Photomask and X-Ray Mask Technology II
Hideo Yoshihara, Editor(s)

© SPIE. Terms of Use
Back to Top