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Proceedings Paper

Study of SiC x-ray mask distortion induced by backetching receding subtractive fabrication process
Author(s): Shinji Tsuboi; Tsutomu Shoki; Tsuneaki Ohta; Hiroshi Okuyama; Kinya Ashikaga; Yoshio Yamashita; Ryo Ohkubo; Yoichi Yamaguchi; Hiroshi Hoga
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Paper Abstract

In this paper, we report on the evaluation of the SiC X-ray mask distortion induced by the backetching receding fabrication process by experiment and simulation. The window-opening process for the backetching mask induced pattern displacements of about the same level as measurement accuracy. Large pattern displacements normally induced by the Si backetching process are reduced by using a lower-stress membrane and/or a thicker Si substrate. Simulation shows that a larger-diameter substrate also reduces mask distortion. The one-point anodic bonding technique has been developed, which suppresses the pattern displacements in the last stage of bonding to the frame, to within measurement error (20 nm: 3(sigma) ).

Paper Details

Date Published: 3 July 1995
PDF: 7 pages
Proc. SPIE 2512, Photomask and X-Ray Mask Technology II, (3 July 1995); doi: 10.1117/12.212773
Show Author Affiliations
Shinji Tsuboi, Sortec Corp. (Japan)
Tsutomu Shoki, Hoya Corp. (Japan)
Tsuneaki Ohta, Oki Electric Industry Co., Ltd. (Japan)
Hiroshi Okuyama, Sortec Corp. (Japan)
Kinya Ashikaga, Sortec Corp. (Japan)
Yoshio Yamashita, Sortec Corp. (Japan)
Ryo Ohkubo, Hoya Corp. (Japan)
Yoichi Yamaguchi, Hoya Corp. (Japan)
Hiroshi Hoga, Oki Electric Industry Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 2512:
Photomask and X-Ray Mask Technology II
Hideo Yoshihara, Editor(s)

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