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Proceedings Paper

Delay time stable chemically amplified e-beam negative tone resist for optical mask application
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Paper Abstract

The newly developed e-beam negative tone AZ EX resist series has been designed for optical mask applications to produce 64MB DRAMs and related microdevices. The chemistry of AZ EX resists is based on chemical amplification employing the three major components: novolak, crosslinker, and radiation sensitive acid generator. The formulations have been optimized to diminish handicaps of most standard chemically amplified resists, such as delay time instability and line width variations upon post exposure bake temperature changes. The sensitivity of AZ EX series are smaller than 1.0 (mu) C/cm2 at Vacc equals 10 kV featuring a delay time stability of more than 24 hours with < 5% line width error at 1.25 micrometers pattern design. Using standard process conditions, the line width variations versus post exposure bake temperature changes are about 0.09 micrometers / degree(s)C in EX22-N, and 0.07 micrometers / degree(s)C in EX24-N, respectively.

Paper Details

Date Published: 3 July 1995
PDF: 10 pages
Proc. SPIE 2512, Photomask and X-Ray Mask Technology II, (3 July 1995); doi: 10.1117/12.212768
Show Author Affiliations
Seiya Masuda, Hoechst Industry Ltd. (Japan)
Georg Pawlowski, Hoechst Industry Ltd. (Japan)


Published in SPIE Proceedings Vol. 2512:
Photomask and X-Ray Mask Technology II
Hideo Yoshihara, Editor(s)

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