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Proceedings Paper

Development of EB lithography system for next generation photomasks
Author(s): Tadashi Komagata; Hitoshi Takemura; Nobuo Gotoh; Kazumitsu Tanaka
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Paper Abstract

A higher quality electron beam (EB) mask lithography system is now required in an advanced field aimed at 1 Gbit DRAM chips. For this purpose, photomask accuracies of 0.03 micrometers to 0.02 micrometers are needed, for the feasibility of an EB lithography system with these accuracy levels is discussed. The error sources of a commercial EB lithography system with a variable shaped beam system and step and repeat writing strategy are examined. The development plans to minimize these errors are described and early results, specifically the field stitching error, obtained from these developments are shown. The mean stitching error was +/- 0.023 micrometers and the random stitching error was +/- 0.030 micrometers . From the analysis of error budget, it is shown that a field stitching accuracy level of 0.02 micrometers will be attainable after the completion of above-mentioned development plans.

Paper Details

Date Published: 3 July 1995
PDF: 7 pages
Proc. SPIE 2512, Photomask and X-Ray Mask Technology II, (3 July 1995); doi: 10.1117/12.212763
Show Author Affiliations
Tadashi Komagata, JEOL, Ltd. (Japan)
Hitoshi Takemura, JEOL, Ltd. (Japan)
Nobuo Gotoh, JEOL, Ltd. (Japan)
Kazumitsu Tanaka, JEOL, Ltd. (Japan)


Published in SPIE Proceedings Vol. 2512:
Photomask and X-Ray Mask Technology II
Hideo Yoshihara, Editor(s)

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