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Proceedings Paper

Reflection masks for soft x-ray projection lithography
Author(s): Masaaki Ito; Takashi Soga; Hiromasa Yamanashi; Taro Ogawa
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Paper Abstract

A multilayer reflection mask is fabricated for soft x-ray projection lithography at a wavelength of 13 nm. A Mo/Si multilayer is deposited using magnetron sputtering to obtain high reflectivity at near normal incidence. Reactive ion etching in SF6 is applied to form a fine W absorber pattern with a thin SiO2 etch-stop layer. Observation of the resulting pattern profile with a scanning electron microscope shows a smooth reflective surface. Reflectivity measurement using a large- reflective-area sample indicates that the patterning process causes little damage to the multilayer. Projection imaging using a 20:1 Schwarzschild optic confirms that a 0.07-micrometers line-and-space pattern can be printed.

Paper Details

Date Published: 3 July 1995
PDF: 5 pages
Proc. SPIE 2512, Photomask and X-Ray Mask Technology II, (3 July 1995); doi: 10.1117/12.212759
Show Author Affiliations
Masaaki Ito, Hitachi, Ltd. (Japan)
Takashi Soga, Hitachi, Ltd. (Japan)
Hiromasa Yamanashi, Hitachi, Ltd. (Japan)
Taro Ogawa, Hitachi, Ltd. (Japan)


Published in SPIE Proceedings Vol. 2512:
Photomask and X-Ray Mask Technology II
Hideo Yoshihara, Editor(s)

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