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Proceedings Paper

Consideration of chemical bond configurations for radiation-hard UHV ECR-CVD SiNx x-ray mask membrane
Author(s): Jinho Ahn; Katsumi Suzuki; Shinji Tsuboi; Yoshio Yamashita
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Paper Abstract

In this paper, the chemical study on the radiation-hard silicon nitride X-ray mask membrane prepared by an ultrahigh-vacuum electron cyclotron resonance chemical vapor deposition is presented. Silicon nitride film with higher nitrogen content showed a degraded radiation-stability. It is speculated that the higher electronegativity and the stress induced by smaller covalent radius of nearest-neighbor nitrogen atoms weakens the Si-H bonds, which is the most possible source of radiation-induced damage. Increases in silicon content in silicon nitride film is supposed to result in an improvement in the radiation stability through the modification in the bandgap structure and the microscopic bond configurations.

Paper Details

Date Published: 3 July 1995
PDF: 5 pages
Proc. SPIE 2512, Photomask and X-Ray Mask Technology II, (3 July 1995); doi: 10.1117/12.212758
Show Author Affiliations
Jinho Ahn, NEC Corp. (Japan)
Katsumi Suzuki, NEC Corp. (Japan)
Shinji Tsuboi, Sortec Corp. (Japan)
Yoshio Yamashita, Sortec Corp. (Japan)


Published in SPIE Proceedings Vol. 2512:
Photomask and X-Ray Mask Technology II
Hideo Yoshihara, Editor(s)

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